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| SI9945AEY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.080 @ VGS = 10 V 0.100 @ VGS = 4.5 V ID (A) "3.7 "3.4 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 "20 "3.7 "3.2 25 2 2.4 Unit V A W 1.7 -55 to 175 _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambienta Steady State Notes a. Surface Mounted on 1" x 1" FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70758 S-57253--Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 RthJA 93 Symbol Typ Max 62.5 Unit _C/W 2-1 SI9945AEY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.7 A VGS = 4.5 V, ID = 3.4 A VDS = 15 V, ID = 3.7 A IS = 2.0 A, VGS = 0 V 20 0.06 0.075 11 1.2 0.080 0.100 1.0 "100 1 10 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 2.0 A, di/dt = 100 A/ms VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 30 V, VGS = 10 V ID = 3.7 A V V, 37 11 2 2 9 10 21 8 45 20 20 40 20 80 ns 20 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70758 S-57253--Rev. C, 24-Feb-98 SI9945AEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 through 5 V 20 I D - Drain Current (A) 4V I D - Drain Current (A) 20 25_C 150_C 15 15 25 TC = -55_C Transfer Characteristics 10 3V 5 10 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 800 Capacitance r DS(on) - On-Resistance ( W ) 0.16 600 0.12 VGS = 4.5 V 0.08 VGS = 10 V C - Capacitance (pF) Ciss 400 200 Coss Crss 0.04 0 0 5 10 15 20 25 ID - Drain Current (A) 0 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) 10 Gate Charge 2.4 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W ) (Normalized) 8 VDS = 30 V ID = 3.7 A 2.0 VGS = 10 V ID = 3.7 A 1.6 6 1.2 4 0.8 2 0.4 0 0 2 4 6 8 10 0 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70758 S-57253--Rev. C, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI9945AEY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 30 Source-Drain Diode Forward Voltage 0.20 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 175_C r DS(on) - On-Resistance ( W ) 0.16 I S - Source Current (A) 0.12 TJ = 25_C 0.08 ID = 3.7 A 0.04 1 0 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.6 120 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.0 90 60 -0.3 30 -0.6 -0.9 -50 -25 0 25 50 75 100 125 150 175 0 0.001 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 10+2 4. Surface Mounted 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 10+3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70758 S-57253--Rev. C, 24-Feb-98 |
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